PBSS5160T - NXP Semiconductors

PBSS5160T PNP Transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T. 1.2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High efficiency due to less heat generation „ Reduces Printed-Circuit Board (PCB) ar.

Features

„ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High efficiency due to less heat generation „ Reduces Printed-Circuit Board (PCB) area required „ Cost-effective replacement for medium power transistors BCP52 and BCX52 1.3 Applications „ Major application segments: ‹ Automotive ‹ Telecom infrastructure ‹ Industrial „ Power management: ‹ DC-to-DC conversion ‹ Supply line switching „ Peripheral driver: ‹ Driver in low supply voltage applications (e.g. lamps and LEDs) ‹ Inductive load drivers (e.g. relays, buzzers and motors) 1.4 Quick reference.