PBSS5120T - NXP

PBSS5120T 20 V/ 1 A PNP low VCEsat (BISS) transistor

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −20 −1 −2 250 UNIT V A A mΩ – Inductive load drivers (e.g. relays, buzzers and motors). DESCRIPTION PNP BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. NPN complement: PBSS4120T. MARKING TYPE NUMBER PBS.

Features

• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative for MOSFETs in specific applications. APPLICATIONS
• Power management
  – DC/DC conversion
  – Supply line switching
  – Battery charger
  – LCD backlighting.
• Peripheral drivers
  – Driver in low supply voltage applications (e.g. lamps and LEDs) handbook, halfpage PBSS5120T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER c.