PBSS5160PAPS - nexperia

PBSS5160PAPS PNP/PNP Transistor

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE.

Features

• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• Exposed heat sink for excellent thermal and electrical conductivity
• High energy efficiency due to less heat generation
• Suitable for Automatic Optical Inspection (AOI) of solder joints
• AEC-Q101 qualified 3. Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• LED lighting
• Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick ref.