PBSS5130T - NXP Semiconductors

PBSS5130T PNP Transistor

PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. −30 −1 −1.5 220 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. Top view 2 1 2 MAM256 MARKING TYPE NUMBER PBSS5130T Note 1. * = p : made in Hong Kong * = t : made in Malaysia * = W : made in Chin.

Features

• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative to MOSFETS in specific applications. APPLICATIONS
• Power management
  – DC/DC converters
  – Supply line switching
  – Battery charger
  – LCD backlighting.
• Peripheral drivers
  – Driver in low supply voltage applications (e.g. lamps and LEDs)
  – Inductive load driver (e.g. relays, buzzers and motors). handbook, halfpage PBSS5130T QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PI.