PBSS5130T NXP Semiconductors PNP Transistor Datasheet, en stock, prix

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PBSS5130T

NXP Semiconductors
PBSS5130T
PBSS5130T PBSS5130T
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Part Number PBSS5130T
Manufacturer NXP (https://www.nxp.com/) Semiconductors
Description PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. −30 −1 −1.5 220 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP low VCEsat transistor i...
Features
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative to MOSFETS in specific applications. APPLICATIONS
• Power management
  – DC/DC converters
  – Supply line switching
  – Battery charger
  – LCD backlighting.
• Peripheral drivers
  – Driver in low supply voltage applications (e.g. lamps and LEDs)
  – Inductive load driver (e.g. relays, buzzers and motors). handbook, halfpage PBSS5130T QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PI...

Document Datasheet PBSS5130T Data Sheet
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