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NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High .
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter voltage
open base
IC ICM T.
PBSS4160PANP - NXP
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PBSS4160PAN |
NXP |
NPN/NPN low VCEsat (BISS) transistor |
|
| 2 | PBSS4160PAN |
nexperia |
1A NPN/NPN low VCEsat (BISS) transistor |
|
| 3 | PBSS4160PANPS |
nexperia |
NPN/NPN Transistor |
|
| 4 | PBSS4160PANS |
nexperia |
NPN/NPN Transistor |
|
| 5 | PBSS4160DPN |
NXP |
NPN/PNP low VCEsat (BISS) transistor |
|
| 6 | PBSS4160DS |
NXP |
NPN/NPN transistor |
|
| 7 | PBSS4160K |
NXP |
1 A NPN low VCEsat (BISS) transistor |
|
| 8 | PBSS4160QA |
nexperia |
NPN transistor |
|
| 9 | PBSS4160T |
GME |
NPN Low VCEsat Transistor |
|
| 10 | PBSS4160T |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 11 | PBSS4160T |
NXP |
NPN transistor |
|
| 12 | PBSS4160U |
NXP |
1A NPN transistor |
|