NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160DS. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat .
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s Dual low power switches (e.g. motors, fans) s Automotive applications 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBSS4160DPN |
NXP |
NPN/PNP low VCEsat (BISS) transistor | |
2 | PBSS4160K |
NXP |
1 A NPN low VCEsat (BISS) transistor | |
3 | PBSS4160PAN |
NXP |
NPN/NPN low VCEsat (BISS) transistor | |
4 | PBSS4160PAN |
nexperia |
1A NPN/NPN low VCEsat (BISS) transistor | |
5 | PBSS4160PANP |
nexperia |
NPN/NPN transistor | |
6 | PBSS4160PANP |
NXP |
NPN/NPN transistor | |
7 | PBSS4160PANPS |
nexperia |
NPN/NPN Transistor | |
8 | PBSS4160PANS |
nexperia |
NPN/NPN Transistor | |
9 | PBSS4160QA |
nexperia |
NPN transistor | |
10 | PBSS4160T |
GME |
NPN Low VCEsat Transistor | |
11 | PBSS4160T |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
12 | PBSS4160T |
NXP |
NPN transistor |