PBSS4160PANP |
Part Number | PBSS4160PANP |
Manufacturer | NXP (https://www.nxp.com/) |
Description | NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4160PAN. PNP/PNP ... |
Features |
• • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • • Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 0.5 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 240 mΩ Quick reference d... |
Document |
PBSS4160PANP Data Sheet
PDF 383.53KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | PBSS4160PAN |
NXP |
NPN/NPN low VCEsat (BISS) transistor | |
2 | PBSS4160PAN |
nexperia |
1A NPN/NPN low VCEsat (BISS) transistor | |
3 | PBSS4160PANP |
nexperia |
NPN/NPN transistor | |
4 | PBSS4160PANPS |
nexperia |
NPN/NPN Transistor | |
5 | PBSS4160PANS |
nexperia |
NPN/NPN Transistor |