PBSS4130T - NXP

PBSS4130T NPN low VCEsat (BISS) transistor

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5130T. MARKING TYPE NUMBER PBSS4130T Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4130T − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1.

Features

• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative to MOSFETs in specific applications. APPLICATIONS
• Power management
  – DC/DC conversion
  – Supply line switching
  – Battery charger
  – LCD backlighting.
• Peripheral driver
  – Driver in low supply voltage applications (e.g. lamps and LEDs)
  – Inductive load drivers (e.g. relays, buzzers and motors). DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEs.