PBSS4130PAN - NXP

PBSS4130PAN NPN/NPN low VCEsat (BISS) transistor

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4130PANP. PNP/PNP complement: PBSS5130PAP. 2. Features and benefits • • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and IC.

Features

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• Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications
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• Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Symbol Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C.