NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5130QA. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High coll.
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• High energy efficiency due to less heat generation
• Reduced Printed-Circuit Board (PCB) area requirements
• Solderable side pads
• AEC-Q101 qualified
3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter voltage
open base
collector current
peak c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBSS4130PAN |
NXP |
NPN/NPN low VCEsat (BISS) transistor | |
2 | PBSS4130PAN |
nexperia |
1A NPN/NPN low VCEsat (BISS) transistor | |
3 | PBSS4130PANP |
NXP |
NPN/NPN low VCEsat (BISS) transistor | |
4 | PBSS4130PANP |
nexperia |
1A NPN/PNP low VCEsat (BISS) transistor | |
5 | PBSS4130T |
NXP |
NPN low VCEsat (BISS) transistor | |
6 | PBSS4112PAN |
NXP |
NPN/NPN low VCEsat (BISS) transistor | |
7 | PBSS4112PAN |
nexperia |
1A NPN/NPN low VCEsat (BISS) transistor | |
8 | PBSS4112PANP |
NXP |
NPN/NPN low VCEsat (BISS) transistor | |
9 | PBSS4112PANP |
nexperia |
1A NPN/PNP low VCEsat (BISS) transistor | |
10 | PBSS4120T |
nexperia |
NPN transistor | |
11 | PBSS4140DPN |
NXP Semiconductors |
40 V low VCEsat NPN/PNP transistor | |
12 | PBSS4140S |
NXP |
NPN transistor |