800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ET. 1.2 Features I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation.
I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −40 V IO output current [1][2] - - −600 mA IORM repe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBRP113ZT |
NXP Semiconductors |
PNP 800 mA | |
2 | PBRP123ET |
NXP Semiconductors |
PNP 800 mA | |
3 | PBRP123YT |
NXP |
PNP 800 MA | |
4 | PBR941 |
NXP |
UHF wideband transistor | |
5 | PBR941B |
NXP |
UHF wideband transistor | |
6 | PBR951 |
NXP |
UHF wideband transistor | |
7 | PBRC-G |
Kyocera Kinseki |
MHz Band Ceramic Chip Resonators | |
8 | PBRC-L |
Kyocera Kinseki |
MHz Band Ceramic Chip Resonators | |
9 | PBRN113E |
nexperia |
NPN RET | |
10 | PBRN113E |
NXP Semiconductors |
NPN 800 mA 40 V BISS RETs | |
11 | PBRN113EK |
nexperia |
NPN RET | |
12 | PBRN113ES |
nexperia |
NPN RET |