PBRP113ZT - NXP Semiconductors

PBRP113ZT PNP 800 mA

www.DataSheet4U.com 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ZT. 1.2 Features I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collecto.

Features

I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.4 Quick reference data Table 1. Symbol VCEO IO IORM R1 R2/R1 [1] [2] [3] Quick reference data Parameter collector-emitter voltage output current repetitive peak output current tp ≤ 1 ms; δ ≤ 0.33 bias resisto.