PBRP113ET |
Part Number | PBRP113ET |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ET. 1.2 F... |
Features |
I 800 mA repetitive peak output current
I High current gain hFE I Built-in bias resistors I Simplifies circuit design
I Low collector-emitter saturation voltage VCEsat
I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and industrial segments
I Medium current peripheral driver
I Switching loads
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
collector-emitter voltage
open base
- - −40 V
IO output current
[1][2] - - −600 mA
IORM
repe... |
Document |
PBRP113ET Data Sheet
PDF 100.64KB |
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