P30NF10 - STMicroelectronics

P30NF10 STP30NF10

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH-EFFICIENCY DC-DC CO.

Features

INTERNAL SCHEMATIC DIAGRAM Value STB30NF10 STP30NF10 STP30NF10FP 100 100 ± 20 35 25 140 115 0.77 28 275 ------55 to 175 2000 18 13 72 30 0.2 Unit VDS VDGR VGS ID ID IDM(
•) Ptot dv/dt (1) EAS (2) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature V.