P30N60T - Infineon Technologies

P30N60T IGP30N60T

TrenchStop Series IGP30N60T IGW30N60T Low Loss IGBT in Trench and Fieldstop technology • • • • • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter dis.

Features

lector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Gate-emitter voltage Short circuit withstand time 1) Symbol VCE IC Value 600 60 30 Unit V A ICpuls VGE tSC Ptot Tj Tstg - 90 90 ±20 5 187 -40...+175 -55...+175 260 V µs W °C VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 Dec-04 Power Semiconductors TrenchStop Series Thermal Resistance .