This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibili.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P16NE06FP |
STMicroelectronics |
STP16NE06FP | |
2 | P16N25 |
Fairchild Semiconductor |
FQP16N25 | |
3 | P16N25 |
ICHON |
Power MOSFET | |
4 | P16NF06 |
ST Microelectronics |
STP16NF06 | |
5 | P16NF06FP |
STMicroelectronics |
STP16NF06FP | |
6 | P16NS25 |
STMicroelectronics |
STP16NS25 | |
7 | P160 |
TT |
Rotary Potentiometer | |
8 | P1602A |
LittelFuse |
Two-Chip SIDACtor Device | |
9 | P1602AA |
Littelfuse |
SIDACtor Protection Thyristors | |
10 | P1602AB |
Littelfuse |
SIDACtor Protection Thyristors | |
11 | P1602AC |
Littelfuse |
SIDACtor Protection Thyristors | |
12 | P1602ACMC |
Littelfuse |
SIDACtor Protection Thyristors |