P12N50 - Fairchild Semiconductor

P12N50 FDP12N50

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.

Features

• RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A
• Low gate charge ( Typ. 22nC)
• Low Crss ( Typ. 11pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient s.