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P12N50 |
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| Part Number | P12N50 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 22nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient s... |
| Document |
 P12N50 Data Sheet
PDF 509.73KB |
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