The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. Terminal Diagram N-CHANNEL ENHANCEMENT MO.
• 12A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• High Input Impedance
• Low Conduction Loss
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Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
The IGBTs are ideal for many high voltage switching applications operating at frequencies wher.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P12N50 |
Fairchild Semiconductor |
FDP12N50 | |
2 | P12NB30 |
ST Microelectronics |
STP12NB30 | |
3 | P12NB30FP |
ST Microelectronics |
STP12NB30 | |
4 | P12NK60Z |
STMicroelectronics |
N-CHANNEL MOSFET | |
5 | P12NM50 |
STMicroelectronics |
STP12NM50 | |
6 | P120 |
TT |
Rotary Potentiometer | |
7 | P1200A |
Diotec |
Silicon Rectifier Diodes | |
8 | P1200A |
Semikron |
Standard silicon rectifier diodes | |
9 | P1200B |
Diotec |
Silicon Rectifier Diodes | |
10 | P1200B |
Semikron |
Standard silicon rectifier diodes | |
11 | P1200D |
Diotec |
Silicon Rectifier Diodes | |
12 | P1200D |
Semikron |
Standard silicon rectifier diodes |