P1003EVG - UNIKC

P1003EVG P-Channel Enhancement Mode MOSFET

P1003EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS -30V RDS(ON) 10.5mΩ @VGS = -10V ID -13A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 1 SYMBOL VDS.

Features

e Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 2 1 LIMITS MIN -30 -1.0 -1.5 -3 ±100 -1 -10 -50 13 10.5 9 29 4200 16 12 10.5 TYP MAX UNIT V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0V, ID = -250mA VDS = VGS, ID = -250mA VDS = 0V, VGS = ±25V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V , TJ = 125 ° C VDS = -5V, VGS = -10V VGS = .