P1003BKA - NIKO-SEM

P1003BKA N-Channel FET

NIKO-SEM N-Channel Enhancement Mode P1003BKA Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ ID 44A D G S D DDD #1 S S S G G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage .

Features

ARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 °C LIMITS MIN TYP MAX UNIT 30 V 1 1.5 3 ±100 nA 1 µA 10 REV 0.9 Apr-12-2011 1 NIKO-SEM N-Channel Enhancement Mode P1003BKA Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free Drain-Source On-State Resistance1 Forward Transconductance1 RDS(.