P1003BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10.5mΩ @VGS = 10V ID 49A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C (Package Limited) TC = 25 °C(Silicon.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P1003BDF |
UNIKC |
N-Channel MOSFET | |
2 | P1003BKA |
NIKO-SEM |
N-Channel FET | |
3 | P1003EK |
UNIKC |
MOSFET | |
4 | P1003EVG |
UNIKC |
P-Channel Enhancement Mode MOSFET | |
5 | P100 |
International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS | |
6 | P1000A |
Diotec Semiconductor |
Silicon Rectifiers | |
7 | P1000A |
Semikron International |
(P1000x) Standard silicon rectifier diodes | |
8 | P1000B |
Diotec Semiconductor |
Silicon Rectifiers | |
9 | P1000B |
Semikron International |
(P1000x) Standard silicon rectifier diodes | |
10 | P1000D |
Diotec Semiconductor |
Silicon Rectifiers | |
11 | P1000D |
Semikron International |
(P1000x) Standard silicon rectifier diodes | |
12 | P1000G |
Diotec Semiconductor |
Silicon Rectifiers |