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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-880LHT 1.00 MIN. GLASS DOME .015 • Extended operating temperature range .209 .220 • No internal coatings • No derating or heat sink required to 80°C .183 .152 .186 .156 .017 .024 .043 .143 .150 .100 .041 CATHODE .036 45° RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power O.
ANODE (CASE)
OD-880LHT
1.00 MIN. GLASS DOME .015
• Extended operating temperature range
.209 .220
• No internal coatings
• No derating or heat sink required to 80°C
.183 .152 .186 .156 .017 .024 .043 .143 .150
.100 .041
CATHODE
.036 45°
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time
TEST CONDITIONS IF = 100mA IF = 50mA
MB E
MIN 6 TYP 8.5 880 80 35 1.55 30 17 0.5 0.5 5 190mW 100mA 3.
OD-880LHT - OptoDiode
HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-880LHT 1.00 MIN. GLASS DOME .015 • Extended operating te.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | OD-880L |
OPTO DIODE |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 2 | OD-880L |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 3 | OD-880LJ |
OptoDiode |
HI-REL GaAlAs IR EMITTERS |
|
| 4 | OD-880-C |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTER CHIPS |
|
| 5 | OD-880E |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 6 | OD-880F |
OPTO DIODE |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 7 | OD-880F |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 8 | OD-880FHT |
OPTO DIODE |
HIGH TEMPERATURE GaAlAs IR EMITTERS |
|
| 9 | OD-880PP |
OptoDiode |
HI-REL GaAlAs IR EMITTERS |
|
| 10 | OD-880W |
OPTO DIODE |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 11 | OD-880W |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 12 | OD-880WHT |
OPTO DIODE |
HIGH TEMPERATURE GaAlAs IR EMITTERS |
|