HIGH-POWER GaAlAs IR EMITTERS FEATURES EPOXY DOME .145 MAX .080 .017 .178 .195 ANODE (CASE) OD-880E • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission • High uniform output • TO-46 Header .100 .041 All dimensions are nominal in inches unless otherwise specified. www.DataSheet4U.com 1.00 MIN .022 CATHODE .036 45°.
EPOXY DOME .145 MAX .080 .017 .178 .195
ANODE (CASE)
OD-880E
• High reliability liquid-phase epitaxially grown GaAlAs
.209 .220
• 880nm peak emission
• High uniform output
• TO-46 Header
.100 .041
All dimensions are nominal in inches unless otherwise specified.
www.DataSheet4U.com
1.00 MIN .022
CATHODE
.036 45°
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10MA VR = 0V MIN 20 TYP 30 880 80 90 30 17 MAX UNITS mW nm nm
Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF
P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | OD-880-C |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTER CHIPS | |
2 | OD-880F |
OPTO DIODE |
HIGH-POWER GaAlAs IR EMITTERS | |
3 | OD-880F |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS | |
4 | OD-880FHT |
OPTO DIODE |
HIGH TEMPERATURE GaAlAs IR EMITTERS | |
5 | OD-880L |
OPTO DIODE |
HIGH-POWER GaAlAs IR EMITTERS | |
6 | OD-880L |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS | |
7 | OD-880LHT |
OPTO DIODE |
HIGH TEMPERATURE GaAlAs IR EMITTERS | |
8 | OD-880LHT |
OptoDiode |
HIGH TEMPERATURE GaAlAs IR EMITTERS | |
9 | OD-880LJ |
OptoDiode |
HI-REL GaAlAs IR EMITTERS | |
10 | OD-880PP |
OptoDiode |
HI-REL GaAlAs IR EMITTERS | |
11 | OD-880W |
OPTO DIODE |
HIGH-POWER GaAlAs IR EMITTERS | |
12 | OD-880W |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS |