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HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Medium emission angle for best coverage/power density 1.00 MIN. GLASS DOME .015 ANODE (CASE) .209 .220 .183 .1.
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Medium emission angle for best coverage/power density
1.00 MIN. GLASS DOME .015
ANODE (CASE)
.209 .220
.183 .152 .186 .156 .017 .024 .043 .143 .150
.100 .041
www.DataSheet4U.com
CATHODE
.036 45°
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
Total Power Outpu.
OD-880L - OPTO DIODE
HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak em.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | OD-880-C |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTER CHIPS |
|
| 2 | OD-880E |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 3 | OD-880F |
OPTO DIODE |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 4 | OD-880F |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 5 | OD-880FHT |
OPTO DIODE |
HIGH TEMPERATURE GaAlAs IR EMITTERS |
|
| 6 | OD-880LHT |
OPTO DIODE |
HIGH TEMPERATURE GaAlAs IR EMITTERS |
|
| 7 | OD-880LHT |
OptoDiode |
HIGH TEMPERATURE GaAlAs IR EMITTERS |
|
| 8 | OD-880LJ |
OptoDiode |
HI-REL GaAlAs IR EMITTERS |
|
| 9 | OD-880PP |
OptoDiode |
HI-REL GaAlAs IR EMITTERS |
|
| 10 | OD-880W |
OPTO DIODE |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 11 | OD-880W |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS |
|
| 12 | OD-880WHT |
OPTO DIODE |
HIGH TEMPERATURE GaAlAs IR EMITTERS |
|