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NVTFS4C25N - ON Semiconductor

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NVTFS4C25N N-Channel Power MOSFET

MOSFET - Power, Single N-Channel, m8FL 30 V, 17 mW, 22 A NVTFS4C25N Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVTFS4C25NWF − Wettable Flanks Product • NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Require.

Features


• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVTFS4C25NWF − Wettable Flanks Product
• NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Notes 1, 3, 5) Power Dissipation RqJA .

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