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MOSFET – Power, Single N-Channel 40 V, 2.4 mW, 136 A NVTFS002N04C Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS002N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATI.
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVTFWS002N04C − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 2, 3, 4)
TC = 25°C
ID
Steady TC = 100°C
Power Dissipation
State TC = 25°C
PD
RqJC (Notes 1, 2, 3)
TC = 100°C
136
A
77
8.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NVTFS002N04CL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 2 | NVTFS007N08HL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 3 | NVTFS012P03P8Z |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 4 | NVTFS016N06C |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NVTFS027N10MCL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NVTFS070N10MCL |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | NVTFS4823N |
ON Semiconductor |
Power MOSFET |
|
| 8 | NVTFS4824N |
ON Semiconductor |
Power MOSFET |
|
| 9 | NVTFS4C02N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 10 | NVTFS4C05N |
ON Semiconductor |
Power MOSFET |
|
| 11 | NVTFS4C06N |
ON Semiconductor |
Power MOSFET |
|
| 12 | NVTFS4C08N |
ON Semiconductor |
N-Channel Power MOSFET |
|