NVTFS4C06N - ON Semiconductor

NVTFS4C06N Power MOSFET

MOSFET – Power, Single, N-Channel, m8FL 30 V, 4.2 mW, 71 A NVTFS4C06N Features  Low RDS(on) to Minimize Conduction Losses  Low Capacitance to Minimize Driver Losses  Optimized Gate Charge to Minimize Switching Losses  NVTFS4C06NWF − Wettable Flanks Product  NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requi.

Features

 Low RDS(on) to Minimize Conduction Losses
 Low Capacitance to Minimize Driver Losses
 Optimized Gate Charge to Minimize Switching Losses
 NVTFS4C06NWF − Wettable Flanks Product
 NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Steady RqJA (Notes 1, 2, 4) State TA = 25.