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MOSFET - Power, Single N-Channel 100 V, 1.7 mW, 273 A NVMTS1D6N10MC Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C u.
• Small Footprint (8x8 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• New Power 88 Package
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
273
A
193
291 W
146
Continuous Drain Cur.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NVMTS1D1N04C |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 2 | NVMTS001N06CL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 3 | NVMTS0D4N04CL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NVMTS0D7N06C |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NVMTS6D0N15MC |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NVM3060 |
ETC |
4096-Bit EEPROM |
|
| 7 | NVMD3P03 |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 8 | NVMD4N03 |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | NVMD6N03R2 |
ON Semiconductor |
Power MOSFET |
|
| 10 | NVMD6N04 |
ON Semiconductor |
Power MOSFET |
|
| 11 | NVMD6P02 |
ON Semiconductor |
Power MOSFET |
|
| 12 | NVMFD020N06C |
ON Semiconductor |
Dual N-Channel Power MOSFET |
|