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MOSFET - Power, Single N-Channel 60 V, 0.72 mW, 464 A NVMTS0D7N06C Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr.
• Small Footprint (8x8 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• Wettable Flank Plated for Enhanced Optical Inspection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Steady TC = 25°C
ID
Current RqJC (Note 2) State TC = 100°C
464
A
328.1
Power Dissipation RqJC (Note 2)
Stead.
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|---|---|---|---|---|
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