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MOSFET – Power, Single N-Channel 60 V, 0.81 mW, 398.2 A NVMTS001N06CL Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • Thes.
• Small Footprint (8x8 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• Power 88 Package, Industry Standard
• AEC−Q101 Qualified and PPAP Capable
• Wettable Flank Plated for Enhanced Optical Inspection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Stea.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NVMTS0D4N04CL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 2 | NVMTS0D7N06C |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 3 | NVMTS1D1N04C |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NVMTS1D6N10MC |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NVMTS6D0N15MC |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NVM3060 |
ETC |
4096-Bit EEPROM |
|
| 7 | NVMD3P03 |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 8 | NVMD4N03 |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | NVMD6N03R2 |
ON Semiconductor |
Power MOSFET |
|
| 10 | NVMD6N04 |
ON Semiconductor |
Power MOSFET |
|
| 11 | NVMD6P02 |
ON Semiconductor |
Power MOSFET |
|
| 12 | NVMFD020N06C |
ON Semiconductor |
Dual N-Channel Power MOSFET |
|