NVCW3SS0D5N03CLA - ON Semiconductor

NVCW3SS0D5N03CLA N-Channel MOSFET

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 30 V, 0.52 mW NVCW3SS0D5N03CLA Features • Typical RDS(on) = 0.43 mW at VGS = 10 V • Typical Qg(tot) = 139 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness 3683 x 3000 80 3462 x 2708 200 x 200 76.2 Gate:.

Features

• Typical RDS(on) = 0.43 mW at VGS = 10 V
• Typical Qg(tot) = 139 nC at VGS = 10 V
• AEC−Q101 Qualified
• RoHS Compliant DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness 3683 x 3000 80 3462 x 2708 200 x 200 76.2 Gate: AlCu Source: Ti−NiV−Ag Drain: Ti−Ni−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Bad dice identified in Inking Gross Die Count: 2458 ORDERING INFORMATION Device NVCW3SS0D5N03CLA Package Unsawn wafer on ring frame RECOMMENDED STORAGE CONDITIONS Temperature RH 22 to 28°C 44% to 66% The Chip is 100% Probed to Mee.