SUPERFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPE.
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 23 mW
• Ultra Low Gate Charge (Typ. Qg = 259 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
• UPS / Solar
DATA SHEET www.onsemi.com
VDSS 650 V
RDS(ON) MAX 27.4 mW @ 10 V
ID MAX 75 A
D
G
S POWER MOSFET
G DS TO−247 LONG LEADS
CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K NTH 027N65S3F
&Z &3 &K NTH027N65S3F
= Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTH080C3 |
Saronix |
Crystal Clock Oscillator | |
2 | NTH2xxx |
Saronix |
(NTH Series) Crystal Clock Oscillator | |
3 | NTH4302 |
ON Semiconductor |
HD3e Quad N-Channel | |
4 | NTH4L013N120M3S |
ON Semiconductor |
SiC MOSFET | |
5 | NTH4L014N120M3P |
ON Semiconductor |
SiC MOSFET | |
6 | NTH4L015N065SC1 |
ON Semiconductor |
SiC MOSFET | |
7 | NTH4L020N090SC1 |
ON Semiconductor |
SiC MOSFET | |
8 | NTH4L020N120SC1 |
ON Semiconductor |
SiC MOSFET | |
9 | NTH4L022N120M3S |
ON Semiconductor |
SiC MOSFET | |
10 | NTH4L023N065M3S |
ON Semiconductor |
SiC MOSFET | |
11 | NTH4L025N065SC1 |
ON Semiconductor |
SiC MOSFET | |
12 | NTH4L027N65S3F |
ON Semiconductor |
N-Channel MOSFET |