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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-4L V(BR)DSS 900 V RDS(ON) MAX 28 mW @ 15 V ID MAX 118 A D NTH4L020N090SC1 Features • Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100% UIL T.
• Typ. RDS(on) = 20 mW @ VGS = 15 V
Typ. RDS(on) = 16 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 196 nC)
• Low Effective Output Capacitance (Coss = 296 pF)
• 100% UIL Tested
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• UPS
• DC-DC Converter
• Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
900
V
Gate−to−Source Voltage
VGS +22/−8 V
Recommended Operation
TC < 175°C VGSop +15/−5 V
Values of Gate−Source Voltage
Co.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTH4L020N120SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 2 | NTH4L022N120M3S |
ON Semiconductor |
SiC MOSFET |
|
| 3 | NTH4L023N065M3S |
ON Semiconductor |
SiC MOSFET |
|
| 4 | NTH4L025N065SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 5 | NTH4L027N65S3F |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | NTH4L028N170M1 |
ON Semiconductor |
SiC MOSFET |
|
| 7 | NTH4L013N120M3S |
ON Semiconductor |
SiC MOSFET |
|
| 8 | NTH4L014N120M3P |
ON Semiconductor |
SiC MOSFET |
|
| 9 | NTH4L015N065SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 10 | NTH4L030N120M3S |
ON Semiconductor |
SiC MOSFET |
|
| 11 | NTH4L032N065M3S |
ON Semiconductor |
SiC MOSFET |
|
| 12 | NTH4L040N120M3S |
ON Semiconductor |
SiC MOSFET |
|