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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L NTH4L013N120M3S Features • Typ. RDS(on) = 13 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 254 nC) • High Speed Switching with Low Capacitance (Coss = 262 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr.
• Typ. RDS(on) = 13 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 254 nC)
• High Speed Switching with Low Capacitance (Coss = 262 pF)
• 100% Avalanche Tested
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Solar Inverters
• Electric Vehicle Charging Stations
• UPS (Uninterruptible Power Supplies)
• Energy Storage Systems
• SMPS (Switch Mode Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
1200
V
Gate−to−Source Voltage
V.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTH4L014N120M3P |
ON Semiconductor |
SiC MOSFET |
|
| 2 | NTH4L015N065SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 3 | NTH4L020N090SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 4 | NTH4L020N120SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 5 | NTH4L022N120M3S |
ON Semiconductor |
SiC MOSFET |
|
| 6 | NTH4L023N065M3S |
ON Semiconductor |
SiC MOSFET |
|
| 7 | NTH4L025N065SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 8 | NTH4L027N65S3F |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | NTH4L028N170M1 |
ON Semiconductor |
SiC MOSFET |
|
| 10 | NTH4L030N120M3S |
ON Semiconductor |
SiC MOSFET |
|
| 11 | NTH4L032N065M3S |
ON Semiconductor |
SiC MOSFET |
|
| 12 | NTH4L040N120M3S |
ON Semiconductor |
SiC MOSFET |
|