NTE2532 - NTE

NTE2532 Integrated Circuit NMOS

The NTE2532 is a 32,768–bit, ultraviolet–light–erasable, electrically–programmable read–only memory in a 24–Lead DIP type package. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be directly driven by Series 74 TTL circuits wit.

Features

D Organization: 4096 x 8 D Single +5V Power Supply D All Inputs/Outputs Fully TTL Compatible D Static Operation (No Clocks, No Refresh) D Max Acces/Min Cycle Time: 300ns D 8
  –Bit Output for Use in Microprocessor Based Systems D N
  –Channel Silicon
  –Gate Technology D 3
  –State Output Buffers D Low Power Dissipation: Active
  – 400mW Typical Standby
  – 100mW Standby D Guaranteed DC Noise Immunity with Standard TTL Loads D No Pull
  –Up Resistors Required Absolute Maximum Ratings: (TA = 0° to +70°C, Note 1 unless otherwise specified) Supply Voltage (Note 2), VCC . . . . . . . . . . . . . . . . . . . . . . ..