NTE2530 (NPN) & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . .
D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTE253 |
NTE |
Silicon Complementary Transistors | |
2 | NTE2530 |
NTE |
Silicon Complementary Transistors | |
3 | NTE2532 |
NTE |
Integrated Circuit NMOS | |
4 | NTE2533 |
NTE |
Silicon NPN Transistor | |
5 | NTE2534 |
NTE |
Silicon Complementary Transistors | |
6 | NTE2535 |
NTE |
Silicon Complementary Transistors | |
7 | NTE2536 |
NTE |
Silicon Complementary Transistors | |
8 | NTE2537 |
NTE |
Silicon Complementary Transistors | |
9 | NTE2538 |
NTE |
Silicon NPN Transistor | |
10 | NTE2539 |
NTE |
Silicon NPN Transistor | |
11 | NTE25 |
NTE |
Silicon Complementary Transistors | |
12 | NTE250 |
NTE |
Silicon Complementary Transistors |