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The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratin.
D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built
–In Base
–Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector
–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector
–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter
–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTE25 |
NTE |
Silicon Complementary Transistors |
|
| 2 | NTE250 |
NTE |
Silicon Complementary Transistors |
|
| 3 | NTE2501 |
NTE |
Silicon Complementary Transistors |
|
| 4 | NTE2502 |
NTE |
Silicon Complementary Transistors |
|
| 5 | NTE2503 |
NTE |
Silicon NPN Transistor |
|
| 6 | NTE2504 |
NTE |
Silicon NPN Transistor |
|
| 7 | NTE2505 |
NTE |
Silicon NPN Transistor |
|
| 8 | NTE2506 |
NTE |
Silicon NPN Transistor |
|
| 9 | NTE2507 |
NTE |
Silicon NPN Transistor |
|
| 10 | NTE2508 |
NTE |
Silicon Complementary Transistors |
|
| 11 | NTE2509 |
NTE |
Silicon Complementary Transistors |
|
| 12 | NTE251 |
NTE |
Silicon Complementary Transistors |
|