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NTE2504 Silicon NPN Transistor High Gain Audio Amplifier Features: D Large Current Capacity (IC = 2A) D Adoption of MBIT Process D High DC Current Gain: hFE = 800 to 3200 D Low Collector–Emitter Saturation Voltage: VCE(sat) < 0.5V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . .
D Large Current Capacity (IC = 2A) D Adoption of MBIT Process D High DC Current Gain: hFE = 800 to 3200 D Low Collector
–Emitter Saturation Voltage: VCE(sat) < 0.5V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector
–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector
–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter
–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTE250 |
NTE |
Silicon Complementary Transistors |
|
| 2 | NTE2501 |
NTE |
Silicon Complementary Transistors |
|
| 3 | NTE2502 |
NTE |
Silicon Complementary Transistors |
|
| 4 | NTE2503 |
NTE |
Silicon NPN Transistor |
|
| 5 | NTE2505 |
NTE |
Silicon NPN Transistor |
|
| 6 | NTE2506 |
NTE |
Silicon NPN Transistor |
|
| 7 | NTE2507 |
NTE |
Silicon NPN Transistor |
|
| 8 | NTE2508 |
NTE |
Silicon Complementary Transistors |
|
| 9 | NTE2509 |
NTE |
Silicon Complementary Transistors |
|
| 10 | NTE25 |
NTE |
Silicon Complementary Transistors |
|
| 11 | NTE251 |
NTE |
Silicon Complementary Transistors |
|
| 12 | NTE2510 |
NTE |
Silicon NPN Transistor |
|