Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construct.
D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector
–Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built
–In Base
–Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector
–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector
–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter
–Base Voltage, VEB . . . .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTE25 |
NTE |
Silicon Complementary Transistors |
|
| 2 | NTE250 |
NTE |
Silicon Complementary Transistors |
|
| 3 | NTE2501 |
NTE |
Silicon Complementary Transistors |
|
| 4 | NTE2502 |
NTE |
Silicon Complementary Transistors |
|
| 5 | NTE2503 |
NTE |
Silicon NPN Transistor |
|
| 6 | NTE2504 |
NTE |
Silicon NPN Transistor |
|
| 7 | NTE2505 |
NTE |
Silicon NPN Transistor |
|
| 8 | NTE2506 |
NTE |
Silicon NPN Transistor |
|
| 9 | NTE2507 |
NTE |
Silicon NPN Transistor |
|
| 10 | NTE2508 |
NTE |
Silicon Complementary Transistors |
|
| 11 | NTE2509 |
NTE |
Silicon Complementary Transistors |
|
| 12 | NTE2510 |
NTE |
Silicon NPN Transistor |
|