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NTE251 |
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| Part Number | NTE251 |
| Manufacturer | NTE |
| Description | The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High... |
| Features |
D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector –Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built –In Base –Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector –Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector –Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter –Base Voltage, VEB . . . ... |
| Document |
 NTE251 Data Sheet
PDF 26.19KB |
| Distributor | Stock | Price | Buy |
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