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NTD2955, NVD2955 MOSFET – Power, P-Channel, DPAK -60 V, -12 A This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and.
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
• NVD and SVD Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms)
Drain Current Dr−.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTD20 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|
| 2 | NTD20N03L27 |
ON |
Power MOSFET |
|
| 3 | NTD20N06 |
ON |
N-channel MOSFET |
|
| 4 | NTD20N06L |
ON Semiconductor |
N-channel MOSFET |
|
| 5 | NTD20P06L |
ON |
Power MOSFET -60 V / -15.5 A / Single P-Channel / DPAK |
|
| 6 | NTD23N03R |
ON |
23 Amps / 25 Volts / N-Channel DPAK |
|
| 7 | NTD24N06 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 8 | NTD24N06L |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 9 | NTD25 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|
| 10 | NTD250N65S3H |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | NTD25P03L |
ON Semiconductor |
Power MOSFET |
|
| 12 | NTD27A |
Naina Semiconductor |
Thyristor/Diode Module |
|