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NTD20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • Withstands High Energy in Avalanche and Commutation Modes • Low Gate Charge for Fast Switching • Pb−Free Packages are Available Applications http://onsemi.com ID MAX (Note 1) −15.5 A • Bridge Circuits • Power Supplies, Power Motor Controls • DC−DC Conversion MAXIMUM RATINGS (TJ = 25°.
• Withstands High Energy in Avalanche and Commutation Modes
• Low Gate Charge for Fast Switching
• Pb−Free Packages are Available
Applications
http://onsemi.com
ID MAX (Note 1) −15.5 A
• Bridge Circuits
• Power Supplies, Power Motor Controls
• DC−DC Conversion
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Continuous Non−Repetitive Steady State tp v10 ms TA = 25°C Symbol VDSS VGS VGSM ID Value −60 $20 $30 −15.5 A Unit V V
V(BR)DSS −60 V
RDS(on) TYP.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTD20 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|
| 2 | NTD20N03L27 |
ON |
Power MOSFET |
|
| 3 | NTD20N06 |
ON |
N-channel MOSFET |
|
| 4 | NTD20N06L |
ON Semiconductor |
N-channel MOSFET |
|
| 5 | NTD23N03R |
ON |
23 Amps / 25 Volts / N-Channel DPAK |
|
| 6 | NTD24N06 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 7 | NTD24N06L |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 8 | NTD25 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|
| 9 | NTD250N65S3H |
ON Semiconductor |
N-Channel MOSFET |
|
| 10 | NTD25P03L |
ON Semiconductor |
Power MOSFET |
|
| 11 | NTD27A |
Naina Semiconductor |
Thyristor/Diode Module |
|
| 12 | NTD2955 |
On Semiconductor |
Power MOSFET |
|