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NTD24N06 - ON Semiconductor

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NTD24N06 N-Channel Power MOSFET

NTD24N06 MOSFET – Power, N-Channel, DPAK/IPAK 60 V, 24 A Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unle.

Features


• Pb−Free Packages are Available Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C, TJ = 150°C − Continuous @ TA = 25°C, TJ = 175°C − Continuous @ TA = 100°C, TJ = 175°C − Single Pulse (tpv10 ms), TJ = 175°C Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Po.

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