NTD24N06 MOSFET – Power, N-Channel, DPAK/IPAK 60 V, 24 A Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unle.
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms)
Drain Current − Continuous @ TA = 25°C, TJ = 150°C − Continuous @ TA = 25°C, TJ = 175°C − Continuous @ TA = 100°C, TJ = 175°C − Single Pulse (tpv10 ms), TJ = 175°C
Total Power Dissipation @ TA = 25°C Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1) Total Po.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTD24N06L |
ON Semiconductor |
N-Channel Power MOSFET | |
2 | NTD20 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
3 | NTD20N03L27 |
ON |
Power MOSFET | |
4 | NTD20N06 |
ON |
N-channel MOSFET | |
5 | NTD20N06L |
ON Semiconductor |
N-channel MOSFET | |
6 | NTD20P06L |
ON |
Power MOSFET -60 V / -15.5 A / Single P-Channel / DPAK | |
7 | NTD23N03R |
ON |
23 Amps / 25 Volts / N-Channel DPAK | |
8 | NTD25 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
9 | NTD250N65S3H |
ON Semiconductor |
N-Channel MOSFET | |
10 | NTD25P03L |
ON Semiconductor |
Power MOSFET | |
11 | NTD27A |
Naina Semiconductor |
Thyristor/Diode Module | |
12 | NTD2955 |
On Semiconductor |
Power MOSFET |