NTD18N06L - ON Semiconductor

NTD18N06L Power MOSFET

NTD18N06L, NTDV18N06L MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV18N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters .

Features

• AEC Q101 Qualified − NTDV18N06L
• These Devices are Pb−Free and are RoHS Compliant Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Tempera.