www.DataSheet4U.com NTD14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters http://onsemi.com 14 AMPERES, 25 VOLT.
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Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters
http://onsemi.com
14 AMPERES, 25 VOLTS RDS(on) = 70.4 mW (Typ)
N−CHANNEL D
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C, Chip − Continuous @ TA = 25°C, Limited by Packag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTD10 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
2 | NTD106B |
Naina Semiconductor |
Thyristor/Diode Module | |
3 | NTD110N02R |
ON |
Power MOSFET | |
4 | NTD12 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
5 | NTD122C |
Naina Semiconductor |
Thyristor/Diode Module | |
6 | NTD12N10 |
ON Semiconductor |
Power MOSFET | |
7 | NTD132C |
Naina Semiconductor |
Thyristor/Diode Module | |
8 | NTD15 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
9 | NTD15N06 |
ON |
Power MOSFET | |
10 | NTD162C |
Naina Semiconductor |
Thyristor/Diode Module | |
11 | NTD172C |
Naina Semiconductor |
Thyristor-Diode Module | |
12 | NTD18N06 |
ON Semiconductor |
Power MOSFET |