NTD12N10 - ON Semiconductor

NTD12N10 Power MOSFET

NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Prov.

Features

http://onsemi.com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
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• Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the DPAK Package These are Pb−Free Devices Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Cur.