NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.Current o at 50 C (mA) Max. Fwd. Voltage Drop at 25 C And I O V F (Volts) o Length L Fig.3 NTD 08 NTD 10 NTD 12 NTD 15 NTD 20 NTD 25 NTD 30 NTD 35 NTD 40 www.
s AMBIENT TEMPERATURE % RATED FWD CURRENT 100 75 50 25 0 0 25 50 75 100 (OC) 125 150 AMBIENT TEMPERATURE FIG.2 NON-REPETITIVE SURGE CURRENT RATINGS 0.1SEC 100 1.0SEC % MAXIMUM SURGE 75 50 25 www.DataSheet4U.com 0 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 CYCLES(60 Hz) FIG.3 PACKAGE STYLE .030 .033 DIA. _ .02 L + 1.00 MIN. .51 MAX. DIA. ALL DIMENSIONS IN INCHES Maximum lead and terminal temperature for soldering,3/8 inch form case, 5 seconds at 250 O C EDI reserves the right to change these specifications at any time whthout notice. ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
2 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
3 | NTD10 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
4 | NTD106B |
Naina Semiconductor |
Thyristor/Diode Module | |
5 | NTD110N02R |
ON |
Power MOSFET | |
6 | NTD12 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
7 | NTD122C |
Naina Semiconductor |
Thyristor/Diode Module | |
8 | NTD12N10 |
ON Semiconductor |
Power MOSFET | |
9 | NTD132C |
Naina Semiconductor |
Thyristor/Diode Module | |
10 | NTD14N03R |
ON Semiconductor |
Power MOSFET 14 Amps N-Channel DPAK | |
11 | NTD15 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
12 | NTD15N06 |
ON |
Power MOSFET |