NT5CB256M8GN - Nanya

NT5CB256M8GN 2Gb DDR3 SDRAM G-Die

The 2Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 2,147,483,648 bits. It is internally configured as an octal-bank DRAM. The 2Gb chip is organized as 64Mbit x 4 I/O x 8 bank and 32Mbit x 8 I/O x 8 banks . These synchronous devices achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for ge.

Features

and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 2 REV 1.1 08/ 2011 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Pin Configuration
  – 78 balls BGA Package (x4) < TOP View> See the ba.